Industrial Inspection

Cubixel’s 3D hologram
technology applied
in cutting-edge
industrial fields.

  • 01

    Advanced package defect inspection

    System In Package (Sip) inspection 01

    Fine thickness measurement for defects that can occur during
    the vertical stacking of high-bandwidth memory (HBM) packages is possible

    Inspection

    Result

    System In Package (Sip) inspection 02

    Stacking quality inspection for non-conductive adhesive film (NCF)
    within the high-bandwidth memory (HBM) package is possible.

    Inspection

    Result

    Wire bonding chip stack inspection

    Wire offset defect and height measurement for wire bond stacking package is possible.

    Inspection

    Result

  • 02

    Semiconductor wafer internal particle inspection

    Vertical incidence inspection

    Internal void of just a few μm or particle inspection
    is possible for all areas of bonding wafers.

    Inspection

    Result

  • 03

    Semiconductor wafer reforming surface inspection

    Vertical incidence inspection

    Quality inspection for internal reformed single/multiple layers processed
    with lasers with the objective of Si wafer separation is possible.

    Inspection

    Result

    Oblique incidence inspection

    Quality inspection for internal reformed single/multiple layers processed
    with lasers with the objective of Si wafer separation is possible.

    Inspection

    Result

  • 04

    Semiconductor wafer oxide film (SiO2) thickness inspection

    Multi-layer transparent material

    Thickness stepping measurement for film SiO2 layer
    on the whole patterned wafer is possible.

    Inspection

    Result

  • 05

    High-precision package substrate inspection

    Multi-layer transparent material

    Status/Quality inspection for the transparent insulation layer in high-precision,
    multi-layer package substrate layer is possible.

    Inspection

    Result

    FSH Advantage Surface offset and distortion inspection for the transparent insulation layer (PID) from the information of surface interference patterns that are difficult to observe with regular optical microscopes is possible.